Infineon BAT62 Silicon Schottky Barrier Diode: Characteristics and Application Circuits

The Infineon BAT62 series represents a family of high-performance Silicon Schottky Barrier Diodes (SBDs) renowned for their low forward voltage drop and ultra-fast switching capabilities. These characteristics make them indispensable in modern electronic circuits where efficiency and speed are paramount. This article delves into the key electrical characteristics of the BAT62 diode and explores several fundamental application circuits.

Key Electrical Characteristics

The standout feature of the BAT62 diode is its low forward voltage drop (Vf), typically around 0.38V at a forward current of 1mA. This is significantly lower than that of standard PN-junction diodes, which results in reduced power loss and higher efficiency, especially in low-voltage applications.

Another critical characteristic is its extremely fast switching speed. Schottky diodes are majority carrier devices, meaning they store very little charge and can switch from the on-state to the off-state (and vice versa) in nanoseconds. This makes them ideal for high-frequency rectification.

Furthermore, the BAT62 offers a low reverse recovery time (trr), which is virtually negligible. Unlike conventional diodes that experience a reverse recovery current, Schottky diodes minimize this effect, leading to lower switching noise and reduced stress on other circuit components. However, it is important to note their higher reverse leakage current compared to PN-junction diodes, a trade-off for their other superior performance metrics.

Application Circuits

1. High-Frequency Rectification: The BAT62 is perfectly suited for use in switched-mode power supply (SMPS) output stages and DC-DC converter circuits. Its fast switching speed ensures efficient rectification at frequencies beyond the capability of standard diodes, minimizing switching losses.

2. Signal Demodulation: In radio frequency (RF) applications, the low forward voltage and fast response time of the BAT62 make it an excellent choice for demodulating amplitude-modulated (AM) signals. Its low Vf allows for the detection of very low-level signals with good sensitivity.

3. Protection and Clamping Circuits: The diode’s rapid switching is leveraged in circuits designed to protect sensitive ICs from voltage transients, such as those caused by electrostatic discharge (ESD). A BAT62 can be used to clamp voltage spikes to a safe level, diverting harmful current away from the protected component.

4. OR-ing Diode in Power Paths: In systems with multiple power sources or battery backups, Schottky diodes like the BAT62 are used to create an OR-ing circuit. Their low forward voltage ensures minimal voltage drop between the selected power source and the load, maximizing available voltage and efficiency.

ICGOODFIND Summary

The Infineon BAT62 Schottky diode is a highly efficient and fast-switching component essential for modern high-frequency and low-power-loss designs. Its low forward voltage and negligible reverse recovery time make it a superior choice for applications ranging from power rectification to signal detection and circuit protection.

Keywords: Schottky Barrier Diode, Low Forward Voltage, Fast Switching Speed, High-Frequency Rectification, Reverse Recovery Time.