Infineon IHW30N135R5: A 1350V 30A High-Performance Reverse Conducting IGBT
The relentless pursuit of efficiency and power density in modern power electronics drives the need for advanced semiconductor solutions. Addressing this challenge, Infineon Technologies introduces the IHW30N135R5, a robust 1350V, 30A Reverse Conducting IGBT (RC-IGBT) that sets a new benchmark for high-performance switching in demanding applications. This device ingeniously integrates a traditional IGBT and a freewheeling diode into a single silicon chip, offering a compact and highly efficient solution for power conversion systems.
A key highlight of the IHW30N135R5 is its impressive voltage rating of 1350V. This high blocking voltage makes it exceptionally suitable for circuits operating directly from rectified three-phase mains voltages, which can reach peaks up to 1200V. It provides the necessary headroom for reliable operation in harsh electrical environments, ensuring system robustness and longevity. The device's 30A collector current rating signifies its capability to handle substantial power levels, making it a prime choice for high-current paths in various industrial setups.
The core innovation of this component lies in its Reverse Conducting (RC) technology. Unlike a standard IGBT that requires an external anti-parallel diode for inductive load switching, the IHW30N135R5 monolithically integrates this diode. This integration yields significant advantages: a drastic reduction in the overall footprint on the PCB, the elimination of diode-related parasitic inductances from interconnects, and an optimized thermal path as both elements share the same silicon die. This leads to a more compact design, improved switching performance, and simplified assembly.
Furthermore, the IHW30N135R5 is engineered for low conduction and switching losses. The trench gate field-stop technology ensures a low saturation voltage (VCE(sat)), which minimizes power loss during the on-state. Combined with soft switching characteristics, this allows for higher operating frequencies, which in turn enables the use of smaller passive components like magnetics and capacitors. The result is a potential for higher system efficiency and increased power density.
This device is particularly optimized for resonant converter topologies, such as those used in industrial heating, solid-state cooking, and wireless power transfer. Its robust characteristics also make it an excellent fit for UPS systems, solar inverters, and induction heating applications where reliability under high stress is paramount.
ICGOODFIND: The Infineon IHW30N135R5 stands out as a superior RC-IGBT that masterfully combines high voltage resilience, significant current handling, and integrated functionality. Its design directly addresses the critical trends of miniaturization and efficiency, making it an ICGOODFIND for engineers designing next-generation high-power, high-frequency, and high-reliability systems.
Keywords: RC-IGBT, 1350V, High-Performance, Reverse Conducting Technology, Resonant Converters.
