Infineon IPW60R070CFD7 650V CoolMOS™ CFD7 Power Transistor: Advanced Superjunction Technology for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Addressing this challenge, Infineon Technologies has introduced the IPW60R070CFD7, a 650V CoolMOS™ CFD7 power transistor that stands as a testament to the evolution of Superjunction (SJ) technology. This device is engineered to set new benchmarks in performance for a wide array of high-efficiency switching applications, including server and telecom SMPS, industrial motor drives, and solar inverters.

At the core of the CFD7 series is Infineon's advanced superjunction technology, which fundamentally redefines the trade-off between on-state resistance (RDS(on)) and gate charge (Qg). The IPW60R070CFD7 boasts an exceptionally low RDS(on) of just 70 mΩ, significantly reducing conduction losses. This is complemented by an outstanding figure-of-merit (RDS(on) x Qg), ensuring that both switching and conduction losses are minimized. The result is a device that operates at higher frequencies with lower energy dissipation, enabling designers to create smaller, lighter, and more efficient power systems.

A key innovation in the CFD7 family is the integration of a fast body diode with enhanced ruggedness. This feature is critical for hard-switching topologies like power factor correction (PFC) and half-bridge circuits, where the body diode conducts during dead time. The diode's improved reverse recovery characteristics (Qrr, trr) minimize switching losses and reduce electromagnetic interference (EMI), leading to more stable and reliable operation. Furthermore, the high dv/dt and di/dt capability of the diode enhances its robustness against stressful switching events.

The device also incorporates a voltage-controlled source terminal, which simplifies gate driving and offers superior noise immunity. This allows for easier implementation in complex circuits and provides a higher tolerance against parasitic turn-on. The combination of low gate charge and a user-friendly gate drive profile makes it compatible with a broad range of controllers, facilitating a straightforward design-in process.

Designed with sustainability in mind, the CoolMOS™ CFD7 technology enables energy savings across the full load range, from light load to peak load. This contributes significantly to reducing the overall carbon footprint of electronic systems, aligning with global energy efficiency standards.

ICGOOODFIND: The Infineon IPW60R070CFD7 CoolMOS™ CFD7 is a pinnacle of power transistor design, leveraging advanced superjunction technology to deliver unmatched efficiency and power density. Its optimal balance of ultra-low RDS(on) and switching losses, coupled with a rugged integrated body diode, makes it an indispensable component for the next generation of high-performance, high-reliability power conversion systems.

Keywords: Superjunction Technology, High-Efficiency Switching, Low RDS(on), Fast Body Diode, Power Density.