Infineon IPW60R199CP: The High-Performance CoolMOS™ Power MOSFET for Efficient Switching Applications

Release date:2025-11-10 Number of clicks:100

Infineon IPW60R199CP: The High-Performance CoolMOS™ Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is the Infineon IPW60R199CP, a state-of-the-art CoolMOS™ Power MOSFET engineered to set new benchmarks in performance for a wide array of demanding applications.

Built on Infineon's revolutionary superjunction (SJ) technology, the IPW60R199CP is designed to minimize conduction and switching losses simultaneously. This device boasts an impressive ultra-low on-state resistance (R DS(on)) of just 199 mΩ at 10 V, which directly translates to reduced conduction losses and higher efficiency, especially in high-current scenarios. This characteristic is paramount for applications like switched-mode power supplies (SMPS), power factor correction (PFC) stages, and motor drives, where every watt saved contributes to a cooler, more reliable, and more compact system.

A key strength of the IPW60R199CP lies in its exceptional switching performance. The superjunction technology ensures extremely low gate charge (Q G) and low output capacitance (C OSS), enabling very fast switching speeds. This allows for operation at higher frequencies, which in turn enables the use of smaller passive components like inductors and transformers. The result is a significant increase in overall power density, allowing designers to create more powerful systems in ever-shrinking form factors.

Furthermore, the IPW60R199CP is characterized by its high robustness and reliability. It offers a high maximum drain-source voltage (V DS) of 650 V, providing a comfortable safety margin for handling voltage spikes and transients commonly encountered in industrial and automotive environments. Its excellent thermal performance, facilitated by its TO-247 package, ensures that heat is effectively dissipated, maintaining device integrity under strenuous operating conditions.

This MOSFET is particularly suited for advanced server and telecom power supplies, industrial motor controls, and high-performance solar inverters, where efficiency and reliability are non-negotiable. By leveraging the IPW60R199CP, engineers can push the boundaries of their designs, achieving previously unattainable levels of efficiency and power density.

ICGOODFIND: The Infineon IPW60R199CP stands as a pinnacle of power switching technology, offering a superior blend of ultra-low R DS(on), fast switching speed, and high reliability to drive the next generation of efficient and compact power electronics.

Keywords: CoolMOS™, Ultra-low RDS(on), High Efficiency, Fast Switching, Power Density.

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