Infineon 2N7002H6327: Key Specifications and Application Circuit Design
The Infineon 2N7002H6327 is a widely adopted N-channel enhancement-mode small-signal MOSFET, encapsulated in the compact SOT-23 package. Renowned for its reliability and performance in low-voltage, low-current applications, it serves as a fundamental building block in modern electronic design.
Key Specifications
Understanding the critical parameters of this MOSFET is essential for effective circuit design. The following table summarizes its key specifications:
| Parameter | Symbol | Value / Condition | Unit |
| :--- | :--- | :--- | :--- |
| Drain-Source Voltage | VDS | 60 | V |
| Continuous Drain Current | ID | 215 | mA |
| Gate-Threshold Voltage | VGS(th) | 0.8 - 2.0 (max. @ 250µA) | V |
| On-Resistance | RDS(on) | < 5.0 ( @ VGS=10V, ID=0.1A) | Ω |
| Total Gate Charge | Qg | 1.6 (typ.) | nC |
| Input Capacitance | Ciss | 30 | pF |
| Package | - | SOT-23 | - |
Analysis of Key Specifications:
60V Drain-Source Voltage (VDS): This rating provides a comfortable margin for low-voltage circuits, such as those powered by 5V, 12V, or 24V rails, protecting against voltage spikes.
215mA Continuous Drain Current (ID): This defines the maximum steady-state current the MOSFET can handle. It is perfectly suited for driving small loads like LEDs, relays, solenoids, or motors within this current range.
Low On-Resistance (RDS(on)): A value of less than 5Ω ensures minimal voltage drop and power loss when the switch is fully turned on (saturated), leading to high efficiency and reduced heat generation.
Low Gate Charge (Qg): This is a crucial parameter for switching speed. A low Qg of 1.6 nC means the MOSFET can be turned on and off very quickly with very little drive current, making it highly efficient in high-frequency switching applications and easy to drive directly from a microcontroller's GPIO pin.
Application Circuit Design
A primary application of the 2N7002H6327 is as a low-side switch. This configuration is ideal for interfacing between a microcontroller (MCU) and a higher-power load.
Basic Low-Side Switch Circuit:
