Infineon BSZ036NE2LS: 40V Dual N-Channel MOSFET in a Compact SSO-8 Package

The relentless pursuit of higher power density and efficiency in modern electronics demands components that deliver robust performance without compromising on space. Addressing this need, the Infineon BSZ036NE2LS stands out as a highly integrated dual N-channel MOSFET housed in a space-saving SSO-8 package. This device is engineered to provide a superior blend of low on-state resistance and high current handling capability, making it an ideal solution for a wide array of power management applications.

A key highlight of the BSZ036NE2LS is its exceptionally low typical on-state resistance (RDS(on)) of just 3.6 mΩ at 10 V. This low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The MOSFETs are rated for a continuous drain current (ID) of 25 A per channel at a case temperature of 25°C, showcasing its ability to handle significant power in a diminutive form factor. With a drain-source voltage (VDS) rating of 40 V, it is perfectly suited for use in 24 V systems, including industrial motor controls, power tools, and robust DC-DC converters.

The compact SSO-8 (Shrink Small Outline-8) package is a significant advantage for designers. It offers the functionality of two discrete MOSFETs in a footprint that is considerably smaller, thereby reducing the required PCB area and simplifying layout complexities. This integration is invaluable for applications where board real estate is at a premium. Furthermore, the device features a low gate charge (QG), which enables fast switching speeds. This is essential for high-frequency switching regulators, as it reduces switching losses and improves overall power supply performance.

Thermal management is simplified thanks to the package's efficient heat dissipation properties, allowing the module to operate reliably under demanding conditions. The BSZ036NE2LS is also characterized by its high ruggedness and reliability, hallmarks of Infineon's quality semiconductor manufacturing.

ICGOODFIND: The Infineon BSZ036NE2LS is a powerhouse of integration, masterfully combining high current capability, ultra-low RDS(on), and a compact footprint to drive efficiency and power density in next-generation electronic designs.

Keywords: Power MOSFET, Low RDS(on), SSO-8 Package, High Current Handling, Power Density.