Infineon IPB120N04S4-02: A High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. Addressing these critical demands, Infineon Technologies introduces the IPB120N04S4-02, a standout member of its esteemed OptiMOS™ power MOSFET family. This 40V N-channel transistor is engineered to set a new benchmark for performance in a compact package, making it an ideal solution for a wide array of demanding applications.

The cornerstone of the IPB120N04S4-02's superiority is its exceptionally low on-state resistance (RDS(on)) of just 1.2 mΩ (max. at VGS = 10 V). This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses. When a MOSFET is switched on, this RDS(on) is the primary source of power loss. By reducing this value to an industry-leading low, the device operates with significantly higher efficiency, generating less waste heat and enabling cooler running systems. This characteristic is crucial for applications like motor control and power tools, where thermal management is often a limiting factor.

Beyond its stellar DC performance, this OptiMOS™ device is optimized for superior switching performance. The low gate charge (QG) and figures of merit (FOM) ensure rapid switching transitions. This is vital for high-frequency switch-mode power supplies (SMPS), DC-DC converters, and synchronous rectification circuits. Faster switching allows for the use of smaller passive components like inductors and capacitors, which directly contributes to increased power density – allowing designers to build more powerful systems in ever-shrinking form factors.

Housed in the robust Infineon’s proprietary SuperSO8 (PG-TSDSON-8) package, the IPB120N04S4-02 offers an excellent power-to-size ratio. This package features an exposed top-side cooling pad that provides extremely low thermal resistance, facilitating efficient heat dissipation away from the silicon die directly into the PCB or an attached heatsink. This mechanical advantage is essential for sustaining high performance under continuous heavy loads without thermal derating.

The device's 40V drain-source voltage rating makes it perfectly suited for a broad spectrum of 24V systems, including:

Automotive Applications: BLDC motor drives (e.g., pumps, fans, window lifters), and non-safety-critical systems.

Industrial Power Systems: High-current DC-DC converters, synchronous rectification, and OR-ing circuits.

Consumer and Computing: High-performance voltage regulator modules (VRMs) for servers and desktops, as well as power tools and battery management systems.

ICGOOODFIND: The Infineon IPB120N04S4-02 is a top-tier power MOSFET that masterfully combines ultra-low RDS(on), fast switching capability, and excellent thermal performance in a miniature package. It is a definitive choice for engineers aiming to push the boundaries of efficiency and power density in modern 24V/40V power electronic designs.

Keywords: Low RDS(on), High Efficiency, Power Density, SuperSO8 Package, Fast Switching