Infineon BSC150N03LDG 30V N-Channel MOSFET Datasheet and Application Review

The Infineon BSC150N03LDG is a highly efficient N-Channel MOSFET designed using Infineon’s advanced OptiMOS™ technology. Optimized for low voltage applications, this 30V power transistor offers an exceptional balance of low on-state resistance and high switching performance, making it a popular choice for power management in a wide range of modern electronic systems.

A key highlight of this MOSFET is its extremely low typical on-resistance (RDS(on)) of just 1.5 mΩ at a gate-source voltage of 10V. This remarkably low resistance minimizes conduction losses, which is critical for improving efficiency and reducing heat generation in power circuits. Such performance is especially valuable in high-current applications where energy efficiency and thermal management are paramount.

The device is housed in a PG-TSDSON-8 (8-pin Dual Small Outline No-Lead) package, which offers an excellent footprint for space-constrained designs while also providing superior thermal performance. This makes the BSC150N03LDG suitable for high-density PCB layouts commonly found in applications like:

- DC-DC converters in computing and server power systems

- Motor control circuits in automotive and industrial systems

- Load switching and power distribution in battery management systems (BMS)

- Synchronous rectification in switch-mode power supplies (SMPS)

Another advantage lies in its low gate charge (Qg) and fast switching characteristics, allowing for high-frequency operation. This reduces the size of passive components like inductors and capacitors, enabling more compact and cost-effective power solutions.

From a reliability perspective, Infineon has designed this MOSFET with robust operational safe areas and high avalanche ruggedness. It also features a low thermal resistance from junction to case, supporting effective heat dissipation under continuous operation.

ICGOOODFIND:

The Infineon BSC150N03LDG stands out as an optimal solution for designers seeking high efficiency, thermal performance, and compactness in low-voltage power switching. Its combination of ultra-low RDS(on), high current capability, and a thermally enhanced package makes it a top contender for next-generation power electronics.

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Keywords:

Low RDS(on), OptiMOS™, Power Management, Synchronous Rectification, DC-DC Conversion