onsemi FDA24N50F Power MOSFET: Datasheet, Application Circuits, and Features

The onsemi FDA24N50F stands as a robust and highly efficient N-Channel Power MOSFET, engineered to meet the demanding requirements of modern high-power switching applications. This 500V, 24A MOSFET is built upon advanced planar stripe technology, offering an optimal balance of low on-resistance and high switching speed. It is an ideal component for a wide array of power conversion systems, including switch-mode power supplies (SMPS), power factor correction (PFC) stages, motor controls, and high-performance inverters.

Key Features and Electrical Characteristics

The FDA24N50F is distinguished by its impressive set of features. Its 500V drain-to-source voltage (Vdss) rating provides a significant safety margin for off-line applications operating from universal input voltages (85V AC to 265V AC). A crucial parameter for efficiency, especially in high-current applications, is its low typical on-resistance (Rds(on)) of just 0.180 Ω at 10V gate drive. This low resistance directly translates to reduced conduction losses, leading to cooler operation and higher overall system efficiency.

Furthermore, the device boasts a low gate charge (Qg) and fast switching characteristics, which are paramount for minimizing switching losses at high frequencies. This combination of low Rds(on) and fast switching makes it a top choice for designers aiming to increase power density and efficiency. The MOSFET is also avalanche energy rated, ensuring ruggedness and reliability in harsh environments where voltage spikes may occur.

Datasheet Overview

The datasheet for the FDA24N50F provides comprehensive information necessary for effective circuit design and integration. Key sections include:

Absolute Maximum Ratings: Defining the operational boundaries for parameters like drain-source voltage, gate-source voltage, and continuous drain current to prevent device damage.

Electrical Characteristics: Detailed tables outlining static parameters (e.g., Vgs(th), Rds(on)) and dynamic parameters (e.g., capacitances, switching times).

Typical Performance Characteristics: Graphs illustrating the relationship between various parameters, such as on-resistance versus junction temperature and switching time versus gate resistance.

Safe Operating Area (SOA): A graph that defines the combinations of drain current and drain-to-source voltage under which the device can be operated safely.

Application Circuits

The FDA24N50F is versatile and can be deployed in numerous circuit topologies. Two primary applications are:

1. Power Factor Correction (PFC) Boost Converter: In continuous conduction mode (CCM) PFC circuits, the FDA24N50F serves as the main switch. Its high voltage rating handles the boosted output voltage (typically around 400V DC), while its low Rds(on) ensures high efficiency in converting the input AC to a regulated DC bus, improving the power factor of the system.

2. Switch-Mode Power Supply (SMPS) Half-Bridge/Bridge Topologies: In high-power SMPS designs, such as server or telecom power supplies, multiple FDA24N50F MOSFETs can be used in half-bridge or full-bridge configurations. Their fast switching speed allows for higher operating frequencies, which in turn reduces the size of magnetic components like transformers and inductors.

ICGOOODFIND Summary

ICGOOODFIND: The onsemi FDA24N50F is a high-performance, high-reliability Power MOSFET that excels in demanding high-voltage and high-current environments. Its exceptional blend of low on-resistance, high avalanche ruggedness, and fast switching speed makes it an outstanding solution for designers focused on maximizing efficiency and power density in applications like industrial motor drives, server PSUs, and advanced PFC stages.

Keywords:

Power MOSFET

High Voltage Switching

Low On-Resistance

Application Circuits

Power Efficiency