Infineon IPP041N04NG: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics demands components that push the boundaries of performance. At the forefront of this innovation is Infineon's OptiMOS™ 5 power MOSFET family, with the IPP041N04NG standing out as a benchmark for low-voltage applications. This device is engineered to minimize power losses and maximize thermal performance, making it an ideal choice for a wide array of demanding power conversion tasks.

A key strength of the IPP041N04NG is its exceptionally low on-state resistance (RDS(on)) of just 1.7 mΩ at 10 V. This ultra-low resistance is paramount in reducing conduction losses, which are a primary source of inefficiency, especially in high-current applications. When a MOSFET is switched on, a lower RDS(on) means less voltage is dropped across the device and less power is wasted as heat. This characteristic is crucial for improving the overall efficiency of systems like synchronous rectification in switch-mode power supplies (SMPS) and motor control circuits.

Beyond static losses, switching performance is critical. The OptiMOS™ 5 technology ensures superior switching characteristics that significantly reduce switching losses. The IPP041N04NG features low gate charge (Qg) and optimized internal capacitances, enabling faster switching frequencies. This allows designers to shrink the size of magnetic components like inductors and transformers, thereby increasing the power density of the final design without compromising thermal management or efficiency.

The benefits of these electrical advancements are realized through advanced packaging. The part is offered in the space-saving D²PAK (TO-263) package, which provides an excellent balance between compact footprint and superior thermal dissipation. This robust package ensures that the device can handle high power levels by effectively transferring heat to the PCB, enhancing long-term reliability and enabling operation under strenuous conditions.

Typical applications where the IPP041N04NG excels include:

Synchronous Rectification in AC-DC and DC-DC power supplies for servers, telecom, and industrial equipment.

Motor Drive and Control circuits for robotics, e-mobility, and industrial automation.

High-Current DC-DC Converters and voltage regulation modules (VRMs) in computing and data center infrastructure.

Active Bridge and OR-ing solutions for redundant power systems.

ICGOOODFIND: The Infineon IPP041N04NG encapsulates the cutting-edge of power semiconductor technology, offering designers a potent combination of ultra-low RDS(on), minimized switching losses, and robust thermal performance in a compact package to build the next generation of efficient and power-dense electronic systems.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS 5, Power Conversion