Infineon IPG20N06S4L-11 OptiMOS Power MOSFET: Features, Applications, and Technical Specifications

The Infineon IPG20N06S4L-11 is a member of the renowned OptiMOS™ power MOSFET family, representing a benchmark in efficiency and reliability for power switching applications. Engineered with Infineon's advanced trench technology, this N-channel MOSFET is designed to deliver exceptional performance with minimal losses, making it an ideal choice for a wide array of modern electronic systems.

A key highlight of this device is its ultra-low on-state resistance (RDS(on)) of just 3.3 mΩ maximum at 10 V gate-source voltage. This exceptionally low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in power circuits. Furthermore, the MOSFET boasts a low gate charge (QG typical of 63 nC), which ensures fast switching speeds and lowers driving losses, a critical factor for high-frequency switching applications.

The device is housed in a TO-220 FullPAK package. This package is fully isolated, which simplifies the mounting process by eliminating the need for an additional insulating kit between the device and the heatsink, thereby improving thermal performance and reducing overall assembly costs.

Technical Specifications:

Drain-Source Voltage (VDS): 60 V

Continuous Drain Current (ID): 120 A (at TC = 25°C)

On-Resistance (RDS(on)): 3.3 mΩ (max) @ VGS = 10 V

Gate Threshold Voltage (VGS(th)): 2.35 V to 3.35 V

Total Gate Charge (QG): 63 nC (typ) @ VGS = 10 V

Package: TO-220 FullPAK

Primary Applications:

The combination of high current handling, low resistance, and fast switching capability makes the IPG20N06S4L-11 exceptionally versatile. Its primary applications include:

DC-DC Converters in server, telecom, and industrial power supplies.

Motor Control and driving circuits for industrial automation, robotics, and automotive systems.

Synchronous Rectification in switch-mode power supplies (SMPS) to boost efficiency.

Load Switching and power management in battery-powered devices.

ICGOOODFIND: The Infineon IPG20N06S4L-11 OptiMOS™ MOSFET stands out as a highly efficient and robust solution for demanding power management tasks. Its superior blend of ultra-low RDS(on), high current capability, and isolated packaging makes it a top-tier component for designers aiming to maximize performance and reliability in applications ranging from industrial drives to advanced computing systems.

Keywords: OptiMOS, Low RDS(on), Power MOSFET, Synchronous Rectification, High Efficiency.